a stronger π–π stacking compact in solid thin-films
33 Im/W Device structure ITO/MoO3 (5 nm)/mCP (40 nm)/DMAC-DPS: 0
and ensures mechanical stability at very high rotational speeds
Semiconducting AgInP2S6 is favored for visible light absorption with an appropriate bandgap structure of ~2
10-diylidene) dimalononitrile for biological imaging in the NIR-II window
PDIN Quantity:5 g a stronger π–π stacking compactPDIN, ETL material used to modify and enhance surface morphology High purity and available online with free worldwide shipping on qualifying orders N,N' Bis[3 (dimethylamino)propyl]perylene 3,4,9,10 tetracarboxylic diimide (PDIN), CAS number 117901 97 0, is alcohol soluble with the assistance of acetic acid (2% in volume) and a traditional cathode interface material (CIM), similar to that of PFN. PDIN can be used as electron transporting layer (ETL)